Radiation imaging detectors using SOI technology /
By: Arai, Yasuo [author.].
Contributor(s): Kurachi, Ikuo [author.].
Material type:
BookSeries: Synthesis digital library of engineering and computer science: ; Synthesis lectures on emerging engineering technologies: # 9.Publisher: [San Rafael, California] : Morgan & Claypool, 2017.Description: 1 PDF (xi, 59 pages) : illustrations.Content type: text Media type: electronic Carrier type: online resourceISBN: 9781627056915.Subject(s): Silicon-on-insulator technology | Imaging systems -- Design and construction | radiation image sensor | silicon-on-insulator | SOI | X-ray diffraction | X-ray imaging | X-ray astronomy | high-energy particle physics | synchrotron radiation | pixel detector | CMOS | radiation tolerance | monolithic sensor | particle detectorDDC classification: 621.367 Online resources: Abstract with links to resource Also available in print.| Item type | Current location | Call number | Status | Date due | Barcode | Item holds |
|---|---|---|---|---|---|---|
E books
|
PK Kelkar Library, IIT Kanpur | Available | EBKE747 |
Mode of access: World Wide Web.
System requirements: Adobe Acrobat Reader.
Part of: Synthesis digital library of engineering and computer science.
Includes bibliographical references (pages 51-58).
1. Introduction --
2. Major issues in SOI pixel detector -- 2.1 Back-gate effect -- 2.2 Crosstalk between sensors and circuits -- 2.3 Leakage current -- 2.4 High-resistivity wafer -- 2.5 Radiation hardness --
3. Basic SOI pixel process -- 3.1 Advantages of SOI structure -- 3.2 FD-SOI radiation sensor fabrication process -- 3.2.1 FZ wafer utilization for handle wafer -- 3.2.2 p-n junction diode and contact -- 3.2.3 Well formation in handle wafer --
4. Radiation hardness improvements -- 4.1 FD-SOI radiation hardness -- 4.2 Cause of nMOSFET drain current change -- 4.3 Cause of p-MOSFET drain current change -- 4.4 Improvement of p-MOSFET radiation hardness --
5. Advanced process developments -- 5.1 Double SOI -- 5.2 Stitching -- 5.3 Back-gate pinned SOI pixel -- 5.4 3D vertical integration -- 5.5 Super-steep subthreshold slope transistor --
6. Detector research and developments -- 6.1 Integration type pixel -- 6.2 Counting-type pixel (CNTPIX) -- 6.3 X-ray detector for astrophysics (XRPIX) -- 6.4 Vertex detector for charged particles (PIXOR) -- 6.5 XFEL detector (SOPHIAS) -- 6.6 Fermilab SOI CMOS detector (MAMBO) -- 6.7 LBNL SOI-imager -- 6.8 Ultra-low temperature applications -- 6.9 Readout board (SEABAS) --
7. Summary -- Bibliography -- Authors' biographies.
Abstract freely available; full-text restricted to subscribers or individual document purchasers.
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Silicon-on-Insulator (SOI) technology is widely used in high-performance and low-power semiconductor devices. The SOI wafers have two layers of active silicon (Si), and normally the bottom Si layer is a mere physical structure. The idea of making intelligent pixel detectors by using the bottom Si layer as sensors for X-ray, infrared light, high-energy particles, neutrons, etc. emerged from very early days of the SOI technology. However, there have been several difficult issues with fabricating such detectors and they have not become very popular until recently. This book offers a comprehensive overview of the basic concepts and research issues of SOI radiation image detectors. It introduces basic issues to implement the SOI detector and presents how to solve these issues. It also reveals fundamental techniques, improvement of radiation tolerance, applications, and examples of the detectors. Since the SOI detector has both a thick sensing region and CMOS transistors in a monolithic die, many ideas have emerged to utilize this technology. This book is a good introduction for people who want to develop or use SOI detectors.
Also available in print.
Title from PDF title page (viewed on February 24, 2017).
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